| PART |
Description |
Maker |
| BFC51 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| USB2227 |
(USB2227 / USB2228) 4th Generation USB2.0 Flash Media Controller
|
SMSC Corporation
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| R4-SXDP-20FR-R1 |
4th Generation Bearing ?MTBF of 160,000 hours thanks to highly durable POM components.
|
List of Unclassifed Man...
|
| USB2602-NU-XX USB2601 USB2601_06 USB2601-NE-XX USB |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs and HS Hub
|
SMSC[SMSC Corporation]
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
